颁痴顿缺陷生长二维层-国产亚洲久一区二区

颁痴顿缺陷生长二维层

简要描述：Newly acquired ion implantation accelerator unit allows 2Dsemiconductors USA to create desired amounts of defects by alpha particle irradiation process at select amount of doses.

更新时间：2024-06-03
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Newly acquired ion implantation accelerator unit allows 2Dsemiconductors USA to create desired amounts of defects by alpha particle irradiation process at select amount of doses. Please contact us for details and pricing.