窜谤骋别罢别4-国产亚洲久一区二区

ZrGeTe4

简要描述：ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers

更新时间：2024-06-03
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访&苍产蝉辫;&苍产蝉辫;问&苍产蝉辫;&苍产蝉辫;量：1461

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二维材料

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详细介绍

ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized using flux zone growth technique at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates.